CZD1225 pnp epitaxial planar silicon transistor elektronische bauelemente 15-apr-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? description the CZD1225 is designed for power amplifier and driver stage amplifier applications. features ? high transition frequency f t = 100mhz (typ.) ? complements to czd2983 marking absolute maximum ratings (t a = 25 c) parameter symbol ratings unit collector to base voltage v cbo -160 v collector to emitter voltage v ceo -160 v emitter to base voltage v ebo -5 v collector current i c -1.5 a base current i b -0.3 a total device dissipation (t a =25c) p d 1 w total device dissipation (t c =25c) p d 15 w junction temperature t j 150 storage temperature t stg -55 ~ 150 electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collecto r -base breakdown voltage v ( br ) cbo -160 - - v i c =-1ma, i e =0 collector-emitter breakdown voltage v (br)ceo -160 - - v i c =-10ma, i b =0 emitte r -base breakdown voltage v (br)ebo -5 - - v i e =-1ma, i c =0 collector cut-off current i cbo - - -1 ? ? Q 300 s, duty cycle Q 2% classification of h fe rank o y range 70 ~ 140 120 ~ 240 ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 a c d n o p g e f h k j m b d-pack (to-252) 1225 ???? ? 1 date code
CZD1225 pnp epitaxial planar silicon transistor elektronische bauelemente 15-apr-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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